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JEE Mains · Physics · STD 12 - 14. Semicondutor electronics
Given below are two statements: one is labelled as Assertion \(A\) and the other is labelled as Reason \(R\) Assertion \(A:\) Diffusion current in a \(p-n\) junction is greater than the drift current in magnitude if the junction is forward biased. Reason \(R:\) Diffusion current in a \(p-n\) junction is from the \(n\)-side to the \(p\)-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below
- A Both \(A\) and \(R\) are correct and \(R\) is the correct explanation of \(A\)
- B Both \(A\) and \(R\) are correct but \(R\) is NOT the correct explanation of \(A\)
- C \(A\) is correct but \(R\) is not correct
- D \(A\) is not correct but \(R\) is correct
Answer & Solution
Correct Answer
(C) \(A\) is correct but \(R\) is not correct
Step-by-step Solution
Detailed explanation
In forward biased condition, diffusion of majority charge carriers takes place from \(p\)-side to \(n\)-side which constitute the diffusion current.
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