WBJEE · Physics · Semiconductors
In an \(n-p-n\) transistor
- A the emitter has higher degree of doping compared to that of the collector
- B the collector has higher degree of doping compared to that of the emitter
- C both the emitter and collector have same degree of doping
- D the base region is most heavily doped
Answer & Solution
Correct Answer
(A) the emitter has higher degree of doping compared to that of the collector
Step-by-step Solution
Detailed explanation
In an \(n-p-n\) or \(p-n-p\) transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.
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