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WBJEE · Physics · Semiconductors

In an \(n-p-n\) transistor

  1. A the emitter has higher degree of doping compared to that of the collector
  2. B the collector has higher degree of doping compared to that of the emitter
  3. C both the emitter and collector have same degree of doping
  4. D the base region is most heavily doped
Verified Solution

Answer & Solution

Correct Answer

(A) the emitter has higher degree of doping compared to that of the collector

Step-by-step Solution

Detailed explanation

In an \(n-p-n\) or \(p-n-p\) transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.