TS EAMCET · Physics · Semiconductors
Which of the following is correct with respect to the following statements? Due to diffusion of electrons from \(n\) to \(p\)-side ....... I. electrons are accumulated in the depletion region. II. electron drift current is from \(p\)-side to \(n\)-side. III. an ionised donor is left in the \(n\)-region. IV. electrons of \(n\)-side come to \(p\)-side and electron-hole combination takes in \(p\)-side. Select the correct option from the following
- A I and II
- B I and III
- C I and IV
- D II, III and IV
Answer & Solution
Correct Answer
(D) II, III and IV
Step-by-step Solution
Detailed explanation
As per the given statements, the statements (II), (III) and (IV) are correct. Whereas statement (I) is wrong. Since due to diffusion of electrons from \(n\) to \(p\)-side of \(p\) - \(n\) junction diode, the electron-hole recombination takes place in the depletion region.
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