TS EAMCET · Physics · Semiconductors
A crystal of intrinsic silicon at room temperature has a carrier concentration of \(1.6 \times 10^{16} / \mathrm{m}^3\). If the donor concentration level is \(4.8 \times 10^{20} / \mathrm{m}^3\), then the concentration of holes in the semiconductor is
- A \(53 \times 10^{12} / \mathrm{m}^3\)
- B \(4 \times 10^{11} / \mathrm{m}^3\)
- C \(4 \times 10^{12} / \mathrm{m}^3\)
- D \(5.3 \times 10^{11} / \mathrm{m}^3\)
Answer & Solution
Correct Answer
(D) \(5.3 \times 10^{11} / \mathrm{m}^3\)
Step-by-step Solution
Detailed explanation
Given \[ \begin{aligned} & n_1=1.6 \times 10^{16} / \mathrm{m}^3 \\ & n_e=4.8 \times 10^{20} / \mathrm{m}^3 \\ & n_h=? \end{aligned} \] The concentration of holes in the semiconductor…
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