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JEE Mains · Physics · STD 12 - Semicondutor electronics
  • JEE Mains 2026
  • Medium
  • MCQ

In a semiconductor p-n diode, the doping concentrations on p-side and n-side are \(10^{15}\text{ atoms/cm}^3\) and \(10^{18}\text{ atoms/cm}^3\), respectively. Which one of the following statements is true ?

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Answer & Solution

Correct Answer

(B) The depletion region width is more on p-side compared to that in n-side

Step-by-step Solution

Detailed explanation

In a p-n junction diode, the total charge on both sides of the depletion region must be equal to maintain charge neutrality.

Let \(x_p\) and \(x_n\) be the widths of the depletion region on the p-side and n-side, respectively. Let \(N_A\) and \(N_D\) be the doping concentrations on the p-side and n-side.

The charge neutrality condition is given by:
\(N_A x_p = N_D x_n\)

Given \(N_A = 10^{15} \text{ atoms/cm}^3\) and \(N_D = 10^{18} \text{ atoms/cm}^3\).

Substituting the values, we get:
\(10^{15} x_p = 10^{18} x_n\)

\(x_p = 10^3 x_n\)

Since \(x_p > x_n\), the depletion region penetrates more into the lightly doped side. Therefore, the depletion region width is more on the p-side compared to that in the n-side.

Answer: The depletion region width is more on p-side compared to that in n-side
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