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JEE Mains · Physics · STD 12 - 14. Semicondutor electronics

In a semiconductor p-n diode, the doping concentrations on p-side and n-side are \(10^{15}\text{ atoms/cm}^3\) and \(10^{18}\text{ atoms/cm}^3\), respectively. Which one of the following statements is true ?

  1. A Widths of depletion region on either side of the interface are equal
  2. B The depletion region width is more on p-side compared to that in n-side
  3. C The depletion region width is more on n-side compared to that in p-side
  4. D No depletion region forms because of unequal doping concentrations on p and n-sides
Verified Solution

Answer & Solution

Correct Answer

(B) The depletion region width is more on p-side compared to that in n-side

Step-by-step Solution

Detailed explanation

In a p-n junction diode, the total charge on both sides of the depletion region must be equal to maintain charge neutrality. Let \(x_p\) and \(x_n\) be the widths of the depletion region on the p-side and n-side, respectively. Let \(N_A\) and \(N_D\) be the doping concentrations…
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