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JEE Mains · Physics · STD 12 - 14. Semicondutor electronics

Consider a situation in which reverse biased current of a particular \(P-N\) junction increases when it is exposed to a light of wavelength \(\le 621\, {nm}\). During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly. (In \({eV}\))

  1. A \(1\)
  2. B \(4\)
  3. C \(2\)
  4. D \(0.5\)
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Answer & Solution

Correct Answer

(C) \(2\)

Step-by-step Solution

Detailed explanation

Band gap \(=\frac{h c}{\lambda_{0}}\) Where \(\lambda_{0}=\) threshold wavelength Band gap \(=\frac{1242\, {ev}-\,{nm}}{621\, {nm}}=2\, {ev}\)
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