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JEE Mains · Physics · STD 12 - Semicondutor electronics
  • JEE Mains 2021
  • Medium
  • Numerical

Consider a situation in which reverse biased current of a particular \(P-N\) junction increases when it is exposed to a light of wavelength \(\le 621\, {nm}\). During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly. (In \({eV}\))

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Answer & Solution

Correct Answer

(C) \(2\)

Step-by-step Solution

Detailed explanation

Band gap \(=\frac{h c}{\lambda_{0}}\)

Where \(\lambda_{0}=\) threshold wavelength

Band gap \(=\frac{1242\, {ev}-\,{nm}}{621\, {nm}}=2\, {ev}\)

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