KCET · Physics · Semiconductors
Which of the following statements is correct for an n-type semiconductor?
- A The donor energy level lies closely above the top of the valance band
- B The donor energy level lies at the half way mark of forbidden energy gap
- C The donor energy level does not exist
- D The donor energy level lies just the bottom of the conduction band
Answer & Solution
Correct Answer
(D) The donor energy level lies just the bottom of the conduction band
Step-by-step Solution
Detailed explanation
In an n-type semiconductor, donor impurities contribute electron energy levels high in the semiconductor band gap, allowing electrons to be easivy excited into the conduction \(b\) and. This donar level is located closed to, and just below, the bottom of the conduction band.
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