AP EAMCET · PHYSICS · Semiconductors
In a \(p-n\) junction diode, the thickness of deplection layer is \(2 \times 10^{-6} \mathrm{~m}\) and barrier potential is \(0.3 \mathrm{~V}\). The intensity of the electric field at the junction is
- A \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(n\) to \(p\) side
- B \(0.6 \times 10^{-6} \mathrm{Vm}^{-1}\) from \(p\) to \(n\) side
- C \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(n\) to \(p\) side
- D \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(p\) to \(n\) side
Answer & Solution
Correct Answer
(C) \(1.5 \times 10^5 \mathrm{Vm}^{-1}\) from \(n\) to \(p\) side
Step-by-step Solution
Detailed explanation
Here, the barrier voltage, \(V=0.3\) volt and the width of depletion layer, \(d=2 \times 10^{-6} \mathrm{~m}\) \(\therefore\) Electric field at the junction,…
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