એક અંતગર્ત અર્ધવાહકમાંથી \(N\)- પ્રકારના બહિર્ગત અર્ધવાહક બનાવવા માટે ........... અશુધ્ધિ ઉમેરવી પડે છે

A જર્મેનિયમ
B ફૉસ્ફરસ
C એલ્યુમિનિયમ
D સિલ્વર

Verified Solution

Answer & Solution

Correct Answer

(B) ફૉસ્ફરસ

Step-by-step Solution

Detailed explanation

When intrinsic semiconductor (Si or Ge) is doped with a pentavalent element, e.g. \(\begin{array}{ll}\text { phosphorus }( P ), & \text { a n-type extrinsic }\end{array}\) semiconductor is created because
pentavalent dopant donates one extra electron for conduction.

Apply the relevant identity from the chapter and substitute the values established in the previous step, keeping the original constraint in view.

Use the simplified expression to isolate the unknown, then plug the result back into the question setup to confirm the working is internally consistent.

Cross-check against a boundary or limiting case. Both the dimensional balance and the qualitative behaviour at the extreme should agree with the candidate answer.

Combine the steps above to identify the correct option. The remaining choices each fail at least one of the consistency, dimensional, or boundary checks.

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