MHT CET · Physics · Semiconductors
The depletion layer in \(\mathrm{p}-\mathrm{n}\) junction region is caused by
- A drift of electrons.
- B migration of impurity ions.
- C diffusion of charge carries.
- D drift of holes.
Answer & Solution
Correct Answer
(C) diffusion of charge carries.
Step-by-step Solution
Detailed explanation
The correct option is C diffusion of charge carriers
Due to the large concentration of electrons in N -side and holes in P -side, they diffuses from their own side to other side when giving biasing. Hence depletion region produces.
Due to the large concentration of electrons in N -side and holes in P -side, they diffuses from their own side to other side when giving biasing. Hence depletion region produces.
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