Out of the following statements, which statements explain the difference between forward biasing and reverse biasing in a p-n junction correctly?Forward biasing in a p-n junctionReverse biasing in a p-n junction(A) p-side is connected to the +ve terminal and n-side to the -ve terminal of the battery.p-side is connected to the -ve terminal and n-side to the +ve terminal of the battery.(B) Depletion layer becomes thicker.Depletion layer becomes thin.(C) Resistance across the p-n junction increases.Resistance across the p-n junction decreases.(D) the current is due to majority charge carriers.the current is due to minority charge carriers.Choose the correct answer from the options given below:

Question

Accepted Answer

(C) (A) and (D) only

Answer

(A) (A), (B) and (D) only

Answer

(B) (B) and (D) only

Answer

(D) (B), (C) and (D) only

List – I	List – II
(A) Glycosidic linkage	(I) Monomeric units of nucleic acid
(B) Peptide linkage	(II) Sugar-heterocyclic base combination
(C) Nucleotide	(III) Linkage between two amino acid units
(D) Nucleoside	(IV) Linkage between two mono saccharide units

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Forward biasing in a p-n junction	Reverse biasing in a p-n junction
(A) p-side is connected to the +ve terminal and n-side to the -ve terminal of the battery.	p-side is connected to the -ve terminal and n-side to the +ve terminal of the battery.
(B) Depletion layer becomes thicker.	Depletion layer becomes thin.
(C) Resistance across the p-n junction increases.	Resistance across the p-n junction decreases.
(D) the current is due to majority charge carriers.	the current is due to minority charge carriers.