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CUET · PHYSICS · PYQ PAPER 2025

In a silicon intrinsic semiconductor, the forbidden energy gap between the valence band and the conduction band is approximately equal to

  1. A 1.1 eV
  2. B 7 eV
  3. C 3 eV
  4. D 0 eV
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Answer & Solution

Correct Answer

(A) 1.1 eV

Step-by-step Solution

Detailed explanation

\(E_g \approx 1.1 \, \text{eV}\) For Silicon (Si) at room temperature (300 K), the band gap is specifically measured to be approximately 1.1 eV.
From CUET
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