CUET · PHYSICS · PYQ PAPER 2025
In a silicon intrinsic semiconductor, the forbidden energy gap between the valence band and the conduction band is approximately equal to
- A 1.1 eV
- B 7 eV
- C 3 eV
- D 0 eV
Answer & Solution
Correct Answer
(A) 1.1 eV
Step-by-step Solution
Detailed explanation
\(E_g \approx 1.1 \, \text{eV}\) For Silicon (Si) at room temperature (300 K), the band gap is specifically measured to be approximately 1.1 eV.
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