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COMEDK · Physics · 30. Semiconductors

A Si and a Ge diode has identical physical dimensions. The band gap in Si is larger than that in Ge. On applying identical reverse bias across these diodes,

  1. A The reverse current in Ge is larger than that in Si .
  2. B The reverse current in Ge is lesser than that in Si .
  3. C The relative magnitudes of reverse currents cannot be determined from the given data.
  4. D The reverse current is identical in both cases.
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Answer & Solution

Correct Answer

(A) The reverse current in Ge is larger than that in Si .

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Detailed explanation

The reverse saturation current \(I_0\) in a p-n junction diode is primarily due to the thermally generated minority charge carriers. The concentration of these minority carriers is proportional to \(n_i^2\), where \(n_i\) is the intrinsic carrier concentration. The intrinsic…
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