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COMEDK · Physics · 30. Semiconductors

A semiconductor \(\mathrm{X}\) is made by doping silicon with phosphorous. A second semiconductor \(\mathrm{Y}\) is made by doping silicon with aluminium. The two are joined by a suitable technique to form a \(\mathrm{p}\)-\(\mathrm{n}\) junction and is connected to a battery such that \(\mathrm{Y}\) is joined to negative of the battery and \(\mathrm{X}\) to the positive of the battery. Which of the following statements is correct?

  1. A Potential barrier of the junction is raised and current is due to majority carriers
  2. B Potential barrier of the junction is zero and current is due to minority carriers
  3. C Potential barrier of the junction is raised and current is due to minority carriers
  4. D Potential barrier of the junction is lowered and current is due to minority carriers
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Answer & Solution

Correct Answer

(C) Potential barrier of the junction is raised and current is due to minority carriers

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Detailed explanation

Silicon doped with phosphorous (a pentavalent impurity) forms an n-type semiconductor, denoted as X. Silicon doped with aluminium (a trivalent impurity) forms a p-type semiconductor, denoted as Y. The junction formed is a p-n junction where Y is the p-side and X is the n-side.…
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