AP EAMCET · PHYSICS · Semiconductors
The hole and the free electron concentrations in a pure silicon at room temperature are given by \(1.4 \times 10^{16} \mathrm{~m}^{-3}\) each under equilibrium. When it is doped with indium and the hole concentration is \(\mathrm{n}_{\mathrm{h}}=4 \times 10^{22} \mathrm{~m}^{-3}\), the electron concentration is
- A \(0.49 \times 10^{10} \mathrm{~m}^{-3}\)
- B \(0.14 \times 10^{10} \mathrm{~m}^{-3}\)
- C \(0.36 \times 10^{10} \mathrm{~m}^{-3}\)
- D \(0.72 \times 10^{10} \mathrm{~m}^{-3}\)
Answer & Solution
Correct Answer
(A) \(0.49 \times 10^{10} \mathrm{~m}^{-3}\)
Step-by-step Solution
Detailed explanation
Here, \(\mathrm{n}_{\mathrm{i}}=1.4 \times 10^{16} \mathrm{~m}^{-3}\) \(\begin{aligned} & \mathrm{n}_{\mathrm{h}}=4 \times 10^{22} \mathrm{~m}^{-3} \\ & \mathrm{n}_{\mathrm{i}}^2=\mathrm{n}_{\mathrm{h}} \mathrm{n}_{\mathrm{e}}\end{aligned}\) Electron concentration,…
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